
黄仕华

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教授
博士生导师
硕士生导师
- 性别 : 男
- 毕业院校 : 复旦大学
- 学历 : 博士研究生毕业
- 学位 : 博士学位
- 在职信息 : 在岗
- 所在单位 : 物理与电子信息工程学院
- 入职时间 : 2004-07-01
- 办公地点 : 校内科技楼(29幢)418室(靠西边)
- 联系方式 : 通讯地址:浙江省金华市迎宾大道688号浙江师范大学数理信息学院
邮编:321004
Email:huangshihua@zjnu.cn
联系电话:0579-82298266(办公室),82298856(实验室)
- Email : c0e8e5570e7802f65b600b6d493a3b07b39b2f61660a23cc03314e51b06ab66ceb577d1b6b4735048e65102461738324226c3d1f6db4810f2b9ba648a4ba3b89ef01e395b2f941972d4d5228b8567b198693d13ef45254cd5ccb9381c144c9683fcb000fd354c0a85f6927d71f0679520dfbbd898f969bd8ed72ac95f066bab9
访问量 :
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[41] Huang,Shihua.Comment on “Field structure and electron acceleration in a laser beam of a high-order Hermite–Gaussian mode” [J. Appl. Phys. 101, 083113 (2007)]..Journal of Applied Physics.2009,Vol.105 (No.2)
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[42] 胡波.半导体超晶格高频放大效应的研究<sup>*</sup>.浙江师范大学学报(自然科学版).2011 (第1期):9-13
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[43] Hong Xiao.Optical characteristics of Si/SiO<sub>2</sub> multilayers prepared by magnetron sputtering.Microelectronic Engineering.2009,Vol.86 (No.11):2342-2346
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[44] Huang, Shihua.Femtosecond first-order autocorrelation measurement based one-photon induced photocurrent in Si Schottky diodes..Optics and Laser Technology.2008,Vol.40 (No.8):1051-1054
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[45] Huang, Shi‐Hua.Effects of Eu<sup>3+</sup> and Er<sup>3+</sup> Doping on Photoelectrical Performance of Dye‐Sensitized Solar Cells.Journal of the American Ceramic Society.2013,Vol.96 (No.10):3108-3113
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[46] Huang,Shihua.Photoluminescence of self-assembled InAs/GaAs quantum dots excited by ultraintensive femtosecond laser..Journal of Applied Physics.2009,Vol.106 (No.10):103522(1-5)
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[47] 黄仕华.短暂时间间隔测量及飞秒技术.光学技术.2007 (第C1期):261-263
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[48] 楼曹鑫.纳米ZnO薄膜的热蒸发法制备及其光电特性研究.半导体光电.2010 (第5期):763-766
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[49] 周朝健.两种液体混合体积减小的研究.物理通报.2013 (第A1期)
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[50] 俞世钢.基于电阻抗特性稻谷含水率测定研究.山西农业科学.2010 (第12期):19-22
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[51] Shihua Huang.Comment on “Electron acceleration by an intense short pulse laser in a static magnetic field in vacuum”.Physical Review. E.2006,Vol.74 (No.6):068401
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[52] Huang, SH.The study of optical characteristic of ZnSe nanocrystal.Applied Physics B: Lasers and Optics.2006,Vol.84 (NO.1-2):323-326
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[53] SHIHUA HUANG.STUDY OF THE INHOMOGENEITY OF SCHOTTKY BARRIER HEIGHT IN NICKEL SILICIDE BY THE INTERNAL PHOTOEMISSION SPECTROSCOPY.Modern Physics Letters B.2006,Vol.20 (No.28):1825-1832
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[54] Huang, Shihua.A study of ultrafast carrier dynamics in laser-crystallized microcrystalline SiGe at highly excited density using time-resolved reflectivity measurement.Semiconductor Science and Technology.2006,Vol.21 (NO.6):729-733
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[55] Huang, SH.Investigation on the barrier height and inhomogeneity of nickel silicide Schottky.Applied Surface Science.2006,Vol.252 (NO.12):4027-4032
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[56] 楼曹鑫.锗/硅量子点形貌随退火温度的变化与电学特性研究.苏州科技学院学报(自然科学版).2011 (第4期):45-48,52
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[57] 俞世钢.基于电容特性的碳酸型饮料品质无损检测.饮料工业.2010 (第10期):37-41
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[58] 黄仕华.Structural and electrical characterization of annealed Si1-xCx/SiC thin film prepared by magnetron sputtering.中国物理B(英文版).2014,第23卷 (第5期):612-616
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[59] 黄仕华.二维三角离子晶体马德隆常数的计算.浙江师范大学学报(自然科学版).2007 (第3期):282-286
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[60] 寿莎.Si/SiO2超晶格晶化特性影响因素分析.材料导报(纳米与新材料专辑).2008,第22卷 (第2期):58