SEM, AFM and TEM Studies for Repeated Irradiation Effect of Femtosecond Laser on 4H-SiC Surface Morphology at Near Threshold Fluence
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- 作者：Wang, Chengwu
- 所属单位：数理与信息工程学院
- 文献类型：期刊
- 发表时间：2018-01-01
- 发表刊物：ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
- 卷号：Vol.7
- 期号：No.2
- 页面范围：P29-P34
- Issn号：2162-8769
- 是否译文：否
- 摘要：In order to investigate the interaction of femtosecond (fs) laser and hard-to-process semiconductor material 4H-SiC at near-threshold fluence, fs laser was repeatedly irradiated to SiC surface at different scanning velocities and scan times. The evolution
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