Simulation of multilayer homoepitaxial growth on Cu (100) surface
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- 作者：Wu, FM
- 所属单位：数理与信息工程学院
- 文献类型：期刊
- 发表时间：2006-01-01
- 发表刊物：Chinese physics
- 卷号：Vol.15
- 期号：NO.4
- 页面范围：807-812
- Issn号：1674-1056
- 是否译文：否
- 关键字：growth;mode;ES;barrier;multilayer;growth;kinetic;Monte;Carlo;simulation;THIN-FILM;GROWTH;MONTE-CARLO-SIMULATION;MOLECULAR-BEAM;EPITAXY;COMPUTER-SIMULATION;SELF-DIFFUSION;STEP;NUCLEATION;KINETICS;SUBMONOLAYER;TRANSITION
- 摘要：The processes of multilayer thin Cu films grown on Cu (100) surfaces at elevated temperature (250-400K) are simulated by mean of kinetic Monte Carlo (KMC) method, where the realistic growth model and physical parameters are used. The effects of small isla
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