Simulation of Multilayer Silicon Thin Films Growth on Si(111) Surface
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- 作者：Wu
- 所属单位：数理与信息工程学院
- 文献类型：期刊
- 发表时间：2006-01-01
- 发表刊物：稀土学报（英文版）
- 期号：第z1期
- Issn号：1002-0721
- 是否译文：否
- 关键字：silicon；homoepitaxy；KMC；simulation；ES；barrier
- 摘要：The homoepitaxial growth of multilayer Si thin film on Si(111) surfaces was simulated by Monte Carlo (MC) method with realistic growth model and physical parameters. Special emphasis was placed on revealing the influence of the Ehrlich-Schwoebel (ES) barr
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