Simulation of multilayer Cu/Pd(100) heteroepitaxial growth by pulse laser deposition
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- 作者：Wu, FM
- 所属单位：数理与信息工程学院
- 文献类型：期刊
- 发表时间：2007-01-01
- 发表刊物：Chinese physics
- 卷号：Vol.16
- 期号：NO.10
- 页面范围：3029-3035
- Issn号：1674-1056
- 是否译文：否
- 关键字：heteroepitaxy;pulse;laser;deposition;Ehrlich-Schwoebel;(ES);barrier;kinetic;Monte;Carlo;simulation;MOLECULAR-BEAM;EPITAXY;MONTE-CARLO-SIMULATION;INTERLAYER;MASS-TRANSPORT;THIN-FILM;GROWTH;BY-LAYER;GROWTH;HOMOEPITAXIAL;GROWTH;DYNAMICS;SIMULATION;CRYSTAL;SU
- 摘要：The heteroepitaxial growth of multilayer Cu/Pd(100) thin film via pulse laser deposition (PLD) at room temperature is simulated by using kinetic Monte Carlo (KMC) method with realistic physical parameters. The effects of mass transport between interlayers
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