Influence of defect states and fixed charges located at the a-Si:H/c-Si interface on the performance of HIT solar cells
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- 作者：Louis Oppong-Antwi
- 所属单位：数理与信息工程学院
- 文献类型：期刊
- 发表时间：2017-01-01
- 发表刊物：Solar Energy
- 卷号：Vol.141
- 页面范围：222-227
- Issn号：0038-092X
- 是否译文：否
- 关键字：Simulation;Interface;defect;state;Interface;fixed;charge;a-Si:H/c-Si;hetero-junction;solar;cell
- 摘要：In this work, a simulation study of various HIT solar cell structures was carried out using AFORS-HET simulation software. The effect of defect states and fixed charges at the a-Si:H/p-Si interface on the solar cell performance was investigated. We found
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