黄仕华
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教授
博士生导师
硕士生导师
- 性别 : 男
- 毕业院校 : 复旦大学
- 学历 : 博士研究生毕业
- 学位 : 博士学位
- 在职信息 : 在岗
- 所在单位 : 物理与电子信息工程学院
- 入职时间 : 2004-07-01
- 办公地点 : 校内科技楼(29幢)418室(靠西边)
- 联系方式 : 通讯地址:浙江省金华市迎宾大道688号浙江师范大学数理信息学院
邮编:321004
Email:huangshihua@zjnu.cn
联系电话:0579-82298266(办公室),82298856(实验室)
- Email : c0e8e5570e7802f65b600b6d493a3b07b39b2f61660a23cc03314e51b06ab66ceb577d1b6b4735048e65102461738324226c3d1f6db4810f2b9ba648a4ba3b89ef01e395b2f941972d4d5228b8567b198693d13ef45254cd5ccb9381c144c9683fcb000fd354c0a85f6927d71f0679520dfbbd898f969bd8ed72ac95f066bab9
访问量 :
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[1] 陈建东.任意辐照强度和温度下的光伏组件输出特性模拟仿真.激光与光电子学进展.2016,第53卷 (第2期):188-196
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[2] Da.Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film<sup>*</sup>.Journal of Semiconductors.2017,第38卷 (第4期):043002
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[3] 陈达.Threshold resistance switching in silicon-rich SiOx thin films.Chinese Physics B.2016 (第11期):534-539
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[4] Da Chen.Nitrogen concentration and temperature dependence of Ag/SiN/p<sup>+</sup>-Si resistive switching structure.Surface Engineering and Applied Electrochemistry.2016,Vol.52 (No.4):403-409
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[5] Jiahua Zhang.Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device.Journal of Semiconductors.2017,Vol.38 (No.12):122003
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[6] 顾静琰.碱液环境下电化学腐蚀多晶硅的研究.半导体光电.2013 (第6期):1005-1008
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[7] 程佩红.Charge storage characteristics of Ni nanocrystals formed by synchronous crystallization.半导体学报(英文版).2014,第35卷 (第10期):21-26
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[8] Da Chen.Threshold resistance switching in silicon-rich SiO<sub>x</sub> thin films.Chinese Physics B.2016,Vol.25 (No.11):117701
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[9] 黄树繁.染料敏化太阳能电池的TiO<sub>2</sub>光电极的制备及优化.功能材料.2011 (第A4期):655-658
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[10] Liu Jian.Simulation of a high-efficiency silicon-based heterojunction solar cell.Journal of Semiconductors.2015,Vol.36 (No.4):044010
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[11] Da Chen.Effect of oxygen-doping concentration on electrical properties of silicon oxycarbide films for memory application.Journal of Micro/Nanolithography, MEMS, and MOEMS:.2016,Vol.15 (No.3):035005
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[12] 井维科.杂质对一维单原子链中晶格振动的影响.半导体光电.2013 (第5期):820-825
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[13] 黄仕华.Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5 film prepared by magnetron sputtering.中国物理B(英文版).2013,第22卷 (第2期):481-486
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[14] Jiahua Zhang.The role of oxygen vacancies in resistive switching behavior of organic-TiO<sub>2</sub> hybrid composite.Applied Physics A.2017,Vol.123 (No.10)
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[15] 黄仕华.PECVD法制备氢化非晶硅薄膜材料.浙江师范大学学报(自然科学版).2014,第37卷 (第2期):121-125
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[16] Da Chen.Investigation of resistive switching behavior of Ag/SnO<sub>x</sub>/ITO device.Journal of Micro/Nanolithography, MEMS, and MOEMS:.2015,Vol.14 (No.2):024501
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[17] 胡波.Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge.中国物理B.2013 (第1期):486-490
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[18] Jing Dong.Low-reflective surface texturing for large area multicrystalline silicon using NaOH-NaClO solution.Surface Engineering and Applied Electrochemistry.2014,Vol.50 (No.1):28-32
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[19] Huang Shi-Hua.Effects of O<sub>2</sub>/Ar ratio and annealing temperature on electrical properties of Ta<sub>2</sub>O<sub>5</sub> film prepared by magnetron sputtering.Chinese Physics B.2013,Vol.22 (No.2):027701
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[20] Hu Bo.Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge.Chinese Physics B.2013,Vol.22 (No.1):017301